Guanhua Weiye will interpret the parameters of MOS tube for you!

VDSS maximum drain-source withstand voltage

　　

　　Drain-source voltage when the drain current flowing through reaches a specific value (a sharp increase) under a specific temperature and gate-source short circuit. The drain-source voltage in this case is also called avalanche breakdown voltage. VDSS is a positive temperature coefficient. At -50°C, VDSS is approximately 90% of that at 25°C. Since there is usually a pre-measurement in normal production, the avalanche breakdown voltage of the MOSFET is always greater than the nominal rated voltage.

　　

　　Guanhua Albert‘s warm reminder: To ensure product reliability, under the worst working conditions, it is recommended that the working voltage does not exceed 80~90% of the rated value.

　　

　　VGSS Maximum gate-source withstand voltage

　　

　　 refers to the VGS value when the reverse current between the gate and source starts to increase sharply. Exceeding this voltage value will cause dielectric breakdown of the gate oxide layer, which is a destructive and irreversible breakdown.

　　

　　 ID maximum drain-source current

　　

　　 refers to the maximum current allowed to pass between the drain and the source when the FET is working normally. The working current of MOSFET should not exceed ID. This parameter will be derated as the junction temperature increases.

　　

　　 IDM maximum pulse drain-source current

　　

　　 reflects the level of pulse current that the device can handle. This parameter will decrease as the junction temperature rises. If this parameter is too small, there is a risk of current breakdown when the system is doing OCP testing.

　　

　　PD maximum power dissipation

　　

　　 refers to the maximum allowable drain-source power dissipation when the performance of the FET does not deteriorate. When in use, the actual power consumption of the FET should be less than that of the PDSM and leave a certain margin. This parameter will generally be derated as the junction temperature increases.

　　

　　 TJ, TSTG working temperature and storage environment temperature range

　　

　　 These two parameters calibrated the allowable junction temperature range of the device working and storage environment. This temperature range is set to meet the requirements of the shortest working life of the device. If you ensure that the device works in this temperature range, it will greatly extend its working life.